A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface...

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Bibliographic Details
Main Authors: Gao, Bin, Kang, Jinfeng, Chen, Bing, Huang, Peng, Ma, Long, Zhang, Feifei, Liu, Lifeng, Liu, Xiaoyan, Tran, Xuan Anh, Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/101274
http://hdl.handle.net/10220/16309

Internet

https://hdl.handle.net/10356/101274
http://hdl.handle.net/10220/16309

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