A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application
A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101274 http://hdl.handle.net/10220/16309 |
| _version_ | 1826114084790075392 |
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| author | Gao, Bin Kang, Jinfeng Chen, Bing Huang, Peng Ma, Long Zhang, Feifei Liu, Lifeng Liu, Xiaoyan Tran, Xuan Anh Yu, Hongyu |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Gao, Bin Kang, Jinfeng Chen, Bing Huang, Peng Ma, Long Zhang, Feifei Liu, Lifeng Liu, Xiaoyan Tran, Xuan Anh Yu, Hongyu |
| author_sort | Gao, Bin |
| collection | NTU |
| description | A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface sub-oxide layer. For RRAM cell, ultra-low RESET current <; 0.5 μA and good reliability (retention @ 150 °C > 104 seconds and endurance > 104 cycles) are demonstrated after optimization by material-oriented methodology. The write and read operation could be performed correctly without additional selector. |
| first_indexed | 2024-10-01T03:33:44Z |
| format | Conference Paper |
| id | ntu-10356/101274 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:33:44Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1012742020-03-07T13:24:50Z A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application Gao, Bin Kang, Jinfeng Chen, Bing Huang, Peng Ma, Long Zhang, Feifei Liu, Lifeng Liu, Xiaoyan Tran, Xuan Anh Yu, Hongyu School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface sub-oxide layer. For RRAM cell, ultra-low RESET current <; 0.5 μA and good reliability (retention @ 150 °C > 104 seconds and endurance > 104 cycles) are demonstrated after optimization by material-oriented methodology. The write and read operation could be performed correctly without additional selector. 2013-10-10T01:03:18Z 2019-12-06T20:35:53Z 2013-10-10T01:03:18Z 2019-12-06T20:35:53Z 2012 2012 Conference Paper Gao, B., Kang, J., Chen, B., Huang, P., Ma, L., Zhang, F., Liu, L., Liu, X., Tran, X. A., & Yu, H. (2012). A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-3. https://hdl.handle.net/10356/101274 http://hdl.handle.net/10220/16309 10.1109/ICSICT.2012.6467645 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Gao, Bin Kang, Jinfeng Chen, Bing Huang, Peng Ma, Long Zhang, Feifei Liu, Lifeng Liu, Xiaoyan Tran, Xuan Anh Yu, Hongyu A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application |
| title | A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application |
| title_full | A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application |
| title_fullStr | A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application |
| title_full_unstemmed | A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application |
| title_short | A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application |
| title_sort | novel self selection bipolar rram cell with ultra low operation currents for cross point application |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/101274 http://hdl.handle.net/10220/16309 |
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