Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen...
| Principais autores: | , , , , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2009
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/101296 http://hdl.handle.net/10220/6152 |