Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen...

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Bibliographic Details
Main Authors: Sun, Handong, Dawson, M. D., Othman, M., Yong, J. C. L., Rorison, J. M., Gilet, P., Grenouillet, L., Million, A.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/101296
http://hdl.handle.net/10220/6152