Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/101296 http://hdl.handle.net/10220/6152 |
| _version_ | 1826109712072966144 |
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| author | Sun, Handong Dawson, M. D. Othman, M. Yong, J. C. L. Rorison, J. M. Gilet, P. Grenouillet, L. Million, A. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Sun, Handong Dawson, M. D. Othman, M. Yong, J. C. L. Rorison, J. M. Gilet, P. Grenouillet, L. Million, A. |
| author_sort | Sun, Handong |
| collection | NTU |
| description | We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%–1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells. |
| first_indexed | 2024-10-01T02:22:26Z |
| format | Journal Article |
| id | ntu-10356/101296 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:22:26Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/1012962023-02-28T19:38:00Z Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy Sun, Handong Dawson, M. D. Othman, M. Yong, J. C. L. Rorison, J. M. Gilet, P. Grenouillet, L. Million, A. School of Physical and Mathematical Sciences DRNTU::Science::Physics We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%–1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells. Published version 2009-11-13T04:42:17Z 2019-12-06T20:36:18Z 2009-11-13T04:42:17Z 2019-12-06T20:36:18Z 2003 2003 Journal Article Sun, H. D., Dawson, M. D., Othman, M., Yong, J. C. L., & Rorison, J. M., et al.(2003). Optical transitions in GaInNAs/GaAs multiquantum wells with various N contents investigated by photoluminescence excitation spectroscopy. Applied Physics Letters., 82(3), 376-378. 0003-6951 https://hdl.handle.net/10356/101296 http://hdl.handle.net/10220/6152 10.1063/1.1539921 en Applied Physics Letters. Applied Physics Letters © copywrite 2003 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 4 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics Sun, Handong Dawson, M. D. Othman, M. Yong, J. C. L. Rorison, J. M. Gilet, P. Grenouillet, L. Million, A. Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy |
| title | Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy |
| title_full | Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy |
| title_fullStr | Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy |
| title_full_unstemmed | Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy |
| title_short | Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy |
| title_sort | optical transitions in gainnas gaas multiquantum wells with varying n contents investigated by photoluminescence excitation spectroscopy |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/101296 http://hdl.handle.net/10220/6152 |
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