Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
Band structures of tensile strained and n+ doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the Γ and L conduction subbands are obtained. The effects of tensile strain and n+ doping in Ge on direct bandgap optical gain and spontaneous radi...
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| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/101299 http://hdl.handle.net/10220/18409 |