A new model of stacked transformers considering skin and substrate effects
A compact model for 1:1 stacked transformers fabricated in silicon IC technology has been developed. The skin and substrate effects are taken into account in the model. The model parameters are extracted from the layout and the process technology specifications. The proposed model is verified by mea...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101489 http://hdl.handle.net/10220/16273 |