A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7...
| Autors principals: | , , , |
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| Altres autors: | |
| Format: | Conference Paper |
| Idioma: | English |
| Publicat: |
2013
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| Matèries: | |
| Accés en línia: | https://hdl.handle.net/10356/101540 http://hdl.handle.net/10220/16332 |