Dominant factor determining the conduction-type of nitrogen-doped ZnO film

Dominant factor determining the conduction-type of nitrogen-doped ZnO film

Nitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×1017 cm−3. After an annealing process in O2 at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film...

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Bibliographic Details
Main Authors: Li, L., Shan, C. X., Zhang, X. T., Lu, Y. M., Sun, B. D., Ma, X. Z., Jiang, D. L., Wu, T.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/101683
http://hdl.handle.net/10220/19634

Internet

https://hdl.handle.net/10356/101683
http://hdl.handle.net/10220/19634

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