Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type
Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance of the material relative to the undoped precursor...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101684 http://hdl.handle.net/10220/19719 |