Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type
Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance of the material relative to the undoped precursor...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/101684 http://hdl.handle.net/10220/19719 |
| _version_ | 1811677580217024512 |
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| author | Ambrosi, Adriano Poh, Hwee Ling Wang, Lu Sofer, Zdenek Pumera, Martin |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Ambrosi, Adriano Poh, Hwee Ling Wang, Lu Sofer, Zdenek Pumera, Martin |
| author_sort | Ambrosi, Adriano |
| collection | NTU |
| description | Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance of the material relative to the undoped precursor. We address the question of whether p-doping (using boron as dopant) or n-doping (using nitrogen as dopant) leads to increased capacitance relative to undoped graphene materials. Using thermal exfoliation we synthesized both boron- and nitrogen-doped graphene materials and measured capacitance relative to the undoped material. After a full characterization by SEM analysis, X-ray photoelectron spectroscopy, Raman spectroscopy, gamma-ray activation analysis, Brunauer–Emmett–Teller analysis, and electrochemical techniques we demonstrate that the doping process does not lead to enhancement of capacitive behavior and that the main characteristic influencing capacitance is the presence of structural defects within the graphitic structure, independent of doping level. |
| first_indexed | 2024-10-01T02:39:37Z |
| format | Journal Article |
| id | ntu-10356/101684 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:39:37Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1016842020-03-07T12:34:53Z Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type Ambrosi, Adriano Poh, Hwee Ling Wang, Lu Sofer, Zdenek Pumera, Martin School of Physical and Mathematical Sciences DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Graphene materials possess attractive properties that can be used for the fabrication of supercapacitors with enhanced energy-storage performance. It has been shown that both boron and nitrogen doping of graphene can improve the intrinsic capacitance of the material relative to the undoped precursor. We address the question of whether p-doping (using boron as dopant) or n-doping (using nitrogen as dopant) leads to increased capacitance relative to undoped graphene materials. Using thermal exfoliation we synthesized both boron- and nitrogen-doped graphene materials and measured capacitance relative to the undoped material. After a full characterization by SEM analysis, X-ray photoelectron spectroscopy, Raman spectroscopy, gamma-ray activation analysis, Brunauer–Emmett–Teller analysis, and electrochemical techniques we demonstrate that the doping process does not lead to enhancement of capacitive behavior and that the main characteristic influencing capacitance is the presence of structural defects within the graphitic structure, independent of doping level. 2014-06-12T09:03:45Z 2019-12-06T20:42:43Z 2014-06-12T09:03:45Z 2019-12-06T20:42:43Z 2014 2014 Journal Article Ambrosi, A., Poh, H. L., Wang, L., Sofer, Z., & Pumera, M. (2014). Capacitance of p- and n-Doped Graphenes is Dominated by Structural Defects Regardless of the Dopant Type. ChemSusChem, 7(4), 1102-1106. 1864-5631 https://hdl.handle.net/10356/101684 http://hdl.handle.net/10220/19719 10.1002/cssc.201400013 en ChemSusChem © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Ambrosi, Adriano Poh, Hwee Ling Wang, Lu Sofer, Zdenek Pumera, Martin Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type |
| title | Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type |
| title_full | Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type |
| title_fullStr | Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type |
| title_full_unstemmed | Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type |
| title_short | Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type |
| title_sort | capacitance of p and n doped graphenes is dominated by structural defects regardless of the dopant type |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| url | https://hdl.handle.net/10356/101684 http://hdl.handle.net/10220/19719 |
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