Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials ar...
| Principais autores: | , |
|---|---|
| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2014
|
| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/101835 http://hdl.handle.net/10220/18786 |