Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix

Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix

Optical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the...

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Bibliographic Details
Main Authors: Fung, Stevenson Hon Yuen, Liu, Yang, Yang, Ming, Wong, Jen It, Liu, Yu Chan, Liu, Zhen, Cen, Zhan Hong, Chen, Tupei, Ding, Liang
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/101981
http://hdl.handle.net/10220/6400

Internet

https://hdl.handle.net/10356/101981
http://hdl.handle.net/10220/6400

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