Three-region characteristic temperature in p-doped quantum dot lasers
We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided i...
| Autors principals: | , , , , , |
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| Altres autors: | |
| Format: | Journal Article |
| Idioma: | English |
| Publicat: |
2014
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| Matèries: | |
| Accés en línia: | https://hdl.handle.net/10356/102500 http://hdl.handle.net/10220/19033 |