The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping

Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temper...

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Detalhes bibliográficos
Principais autores: Gu, Chenjie, Zhou, Canliang, Ang, Diing Shenp, Ju, Xin, Gu, Renyuan, Duan, Tianli
Outros Autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado em: 2019
Assuntos:
Gate Stack
Semiconductor Devices
DRNTU::Engineering::Electrical and electronic engineering
Acesso em linha:https://hdl.handle.net/10356/102696
http://hdl.handle.net/10220/47785

Internet

https://hdl.handle.net/10356/102696
http://hdl.handle.net/10220/47785

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