The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping
Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temper...
Principais autores: | , , , , , |
---|---|
Outros Autores: | |
Formato: | Journal Article |
Idioma: | English |
Publicado em: |
2019
|
Assuntos: | |
Acesso em linha: | https://hdl.handle.net/10356/102696 http://hdl.handle.net/10220/47785 |