The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping
Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temper...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/102696 http://hdl.handle.net/10220/47785 |
| _version_ | 1811695140992974848 |
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| author | Gu, Chenjie Zhou, Canliang Ang, Diing Shenp Ju, Xin Gu, Renyuan Duan, Tianli |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Gu, Chenjie Zhou, Canliang Ang, Diing Shenp Ju, Xin Gu, Renyuan Duan, Tianli |
| author_sort | Gu, Chenjie |
| collection | NTU |
| description | Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temperature instability degradation in the high-κ n-MOSFET indicate that oxygen vacancy (VO) is the dominant defect type that responds for the shallow electron trapping. However, recent experimental results reveal that the VO defect density required to accommodate the experimental measured recoverable threshold voltage degradation (ΔVth) is much higher than that of the reasonable atomic structure in the amorphous HfO2. On the other hand, investigations on the disordered Hf-O-Hf network in the amorphous HfO2 reveal their capabilities as charge trapping centers; therefore, in this work, atomic simulation work is performed, and our results show that the disordered Hf-O-Hf networks can act as effective electron capture centers with shallow levels near the Si conduction band. Moreover, the high density of the stretched Hf-O-Hf networks in the amorphous HfO2 also significantly enriches the shallow electron traps in the oxide. |
| first_indexed | 2024-10-01T07:18:45Z |
| format | Journal Article |
| id | ntu-10356/102696 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:18:45Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/1026962020-03-07T14:00:34Z The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping Gu, Chenjie Zhou, Canliang Ang, Diing Shenp Ju, Xin Gu, Renyuan Duan, Tianli School of Electrical and Electronic Engineering Gate Stack Semiconductor Devices DRNTU::Engineering::Electrical and electronic engineering Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temperature instability degradation in the high-κ n-MOSFET indicate that oxygen vacancy (VO) is the dominant defect type that responds for the shallow electron trapping. However, recent experimental results reveal that the VO defect density required to accommodate the experimental measured recoverable threshold voltage degradation (ΔVth) is much higher than that of the reasonable atomic structure in the amorphous HfO2. On the other hand, investigations on the disordered Hf-O-Hf network in the amorphous HfO2 reveal their capabilities as charge trapping centers; therefore, in this work, atomic simulation work is performed, and our results show that the disordered Hf-O-Hf networks can act as effective electron capture centers with shallow levels near the Si conduction band. Moreover, the high density of the stretched Hf-O-Hf networks in the amorphous HfO2 also significantly enriches the shallow electron traps in the oxide. MOE (Min. of Education, S’pore) Published version 2019-03-06T09:00:32Z 2019-12-06T20:59:17Z 2019-03-06T09:00:32Z 2019-12-06T20:59:17Z 2019 Journal Article Gu, C., Zhou, C., Ang, D. S., Ju, X., Gu, R., & Duan, T. (2019). The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping. Journal of Applied Physics, 125(2), 025705-. doi:10.1063/1.5059381 0021-8979 https://hdl.handle.net/10356/102696 http://hdl.handle.net/10220/47785 10.1063/1.5059381 en Journal of Applied Physics © 2018 Authors. All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of Authors. 7 p. application/pdf |
| spellingShingle | Gate Stack Semiconductor Devices DRNTU::Engineering::Electrical and electronic engineering Gu, Chenjie Zhou, Canliang Ang, Diing Shenp Ju, Xin Gu, Renyuan Duan, Tianli The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping |
| title | The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping |
| title_full | The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping |
| title_fullStr | The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping |
| title_full_unstemmed | The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping |
| title_short | The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping |
| title_sort | role of the disordered hfo2 network in the high κ n mosfet shallow electron trapping |
| topic | Gate Stack Semiconductor Devices DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/102696 http://hdl.handle.net/10220/47785 |
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