Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention

This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory desi...

Full description

Bibliographic Details
Main Authors: Wang, Yuhao, Yu, Hao, Zhang, Wei
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/102813
http://hdl.handle.net/10220/19987