Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention
This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory desi...
| Main Authors: | , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/102813 http://hdl.handle.net/10220/19987 |
| _version_ | 1826124073312190464 |
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| author | Wang, Yuhao Yu, Hao Zhang, Wei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Yuhao Yu, Hao Zhang, Wei |
| author_sort | Wang, Yuhao |
| collection | NTU |
| description | This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory design with efficient estimation of area, access time, and power. Based on this design platform, one 3-D-integrated hybrid memory is designed by stacking one tier of CBRAM-crossbar with tiers of static random access memory (SRAM) and dynamic random access memory (DRAM), where the tier of CBRAM-crossbar is deployed for data retention during power gating of SRAM/DRAM tiers. One corresponding block-level data retention is developed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared with phase-change random-access-memory-based system-level data retention, our design achieves 11× faster data-migration speed and 10× less data-migration power. When compared with ferroelectric random-access-memory-based bit-level data retention, our design also achieves 17× smaller area and 56× smaller power under the same data-migration speed. |
| first_indexed | 2024-10-01T06:14:42Z |
| format | Journal Article |
| id | ntu-10356/102813 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:14:42Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1028132020-05-28T07:18:19Z Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention Wang, Yuhao Yu, Hao Zhang, Wei School of Electrical and Electronic Engineering School of Computer Engineering DRNTU::Engineering::Computer science and engineering::Data This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory design with efficient estimation of area, access time, and power. Based on this design platform, one 3-D-integrated hybrid memory is designed by stacking one tier of CBRAM-crossbar with tiers of static random access memory (SRAM) and dynamic random access memory (DRAM), where the tier of CBRAM-crossbar is deployed for data retention during power gating of SRAM/DRAM tiers. One corresponding block-level data retention is developed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared with phase-change random-access-memory-based system-level data retention, our design achieves 11× faster data-migration speed and 10× less data-migration power. When compared with ferroelectric random-access-memory-based bit-level data retention, our design also achieves 17× smaller area and 56× smaller power under the same data-migration speed. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2014-06-30T06:27:40Z 2019-12-06T21:00:40Z 2014-06-30T06:27:40Z 2019-12-06T21:00:40Z 2013 2013 Journal Article Wang, Y., Yu, H., & Zhang, W. (2014). Nonvolatile CBRAM-Crossbar-Based 3-D-Integrated Hybrid Memory for Data Retention. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22(5), 957-970. 1063-8210 https://hdl.handle.net/10356/102813 http://hdl.handle.net/10220/19987 10.1109/TVLSI.2013.2265754 en IEEE transactions on Very Large Scale Integration (VLSI) Systems © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/TVLSI.2013.2265754]. 6 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Computer science and engineering::Data Wang, Yuhao Yu, Hao Zhang, Wei Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention |
| title | Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention |
| title_full | Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention |
| title_fullStr | Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention |
| title_full_unstemmed | Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention |
| title_short | Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention |
| title_sort | nonvolatile cbram crossbar based 3 d integrated hybrid memory for data retention |
| topic | DRNTU::Engineering::Computer science and engineering::Data |
| url | https://hdl.handle.net/10356/102813 http://hdl.handle.net/10220/19987 |
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