Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices

Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices

We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...

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Bibliographic Details
Main Authors: Loy, Desmond Jia Jun, Dananjaya, Putu Andhita, Hong, Xiao Liang, Shum, D. P., Lew, Wensiang
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2019
Subjects:
Conduction Mechanisms
Schottky Emission
DRNTU::Science::Chemistry
Online Access:https://hdl.handle.net/10356/103404
http://hdl.handle.net/10220/47306

Internet

https://hdl.handle.net/10356/103404
http://hdl.handle.net/10220/47306

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