Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems
This work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si3N4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is ∼22....
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/103431 http://hdl.handle.net/10220/25836 |
| _version_ | 1826109790809489408 |
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| author | Lin, Pamela Babicheva, Rita I. Xue, Ming Zhang, Hai Shu Xu, Huan Liu, Bo Zhou, Kun |
| author2 | School of Mechanical and Aerospace Engineering |
| author_facet | School of Mechanical and Aerospace Engineering Lin, Pamela Babicheva, Rita I. Xue, Ming Zhang, Hai Shu Xu, Huan Liu, Bo Zhou, Kun |
| author_sort | Lin, Pamela |
| collection | NTU |
| description | This work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si3N4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is ∼22.5 GPa and it undergoes brittle fracture at the interface. However, at 600 K, failure occurs in the a-Si3N4 layer in a ductile mode. With the existence of void in the Si layer, crack initiates at the void and propagates toward the interface when the temperature is 300 K. However, as temperature increases to 600 K, the defected bilayer system undergoes brittle fracture at the interface at a significantly lowered interfacial strength. With the presence of void at the interface, the bilayer system fractures at the interface with a deteriorated strength regardless of temperature. Under mode II loading, the Si/a-Si3N4 system undergoes three deformation processes: elastic deformation, followed by plastic deformation in the a-Si3N4 layer, and subsequently, interfacial sliding. The presence of voids at different locations and the increase in temperature lower the stresses required for interfacial sliding but do not have significant effect on the shear deformation processes. This study provides an insight to fracture behavior of Si/a-Si3N4 system at certain operating conditions. |
| first_indexed | 2024-10-01T02:23:45Z |
| format | Journal Article |
| id | ntu-10356/103431 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:23:45Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1034312020-03-07T13:22:21Z Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems Lin, Pamela Babicheva, Rita I. Xue, Ming Zhang, Hai Shu Xu, Huan Liu, Bo Zhou, Kun School of Mechanical and Aerospace Engineering DRNTU::Science::Chemistry::Physical chemistry::Molecular structure and bonding This work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si3N4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is ∼22.5 GPa and it undergoes brittle fracture at the interface. However, at 600 K, failure occurs in the a-Si3N4 layer in a ductile mode. With the existence of void in the Si layer, crack initiates at the void and propagates toward the interface when the temperature is 300 K. However, as temperature increases to 600 K, the defected bilayer system undergoes brittle fracture at the interface at a significantly lowered interfacial strength. With the presence of void at the interface, the bilayer system fractures at the interface with a deteriorated strength regardless of temperature. Under mode II loading, the Si/a-Si3N4 system undergoes three deformation processes: elastic deformation, followed by plastic deformation in the a-Si3N4 layer, and subsequently, interfacial sliding. The presence of voids at different locations and the increase in temperature lower the stresses required for interfacial sliding but do not have significant effect on the shear deformation processes. This study provides an insight to fracture behavior of Si/a-Si3N4 system at certain operating conditions. 2015-06-08T07:12:23Z 2019-12-06T21:12:34Z 2015-06-08T07:12:23Z 2019-12-06T21:12:34Z 2015 2015 Journal Article Lin, P., Babicheva, R. I., Xue, M., Zhang, H. S., Xu, H., Liu, B., et al. (2015). Effects of temperature and voids on the interfacial fracture of Si/a-Si3N4 bilayer systems. Physica status solidi (b), 252(9), 2013-2019. 0370-1972 https://hdl.handle.net/10356/103431 http://hdl.handle.net/10220/25836 10.1002/pssb.201552087 en Physica status solidi (b) © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Science::Chemistry::Physical chemistry::Molecular structure and bonding Lin, Pamela Babicheva, Rita I. Xue, Ming Zhang, Hai Shu Xu, Huan Liu, Bo Zhou, Kun Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems |
| title | Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems |
| title_full | Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems |
| title_fullStr | Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems |
| title_full_unstemmed | Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems |
| title_short | Effects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systems |
| title_sort | effects of temperature and voids on the interfacial fracture of si a si3 n4 bilayer systems |
| topic | DRNTU::Science::Chemistry::Physical chemistry::Molecular structure and bonding |
| url | https://hdl.handle.net/10356/103431 http://hdl.handle.net/10220/25836 |
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