Solid source growth of Si oxide nanowires promoted by carbon nanotubes

Solid source growth of Si oxide nanowires promoted by carbon nanotubes

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs...

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Bibliographic Details
Main Authors: Lu, Congxiang, Liu, Wen-wen, Tan, Chong Wei, Tay, Beng Kang, Coquet, Philippe, Wang, Xingli, Li, Xiaocheng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
Online Access:https://hdl.handle.net/10356/103625
http://hdl.handle.net/10220/24540

Internet

https://hdl.handle.net/10356/103625
http://hdl.handle.net/10220/24540

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