AlN-AlN layer bonding and it's thermal characteristics

AlN-AlN layer bonding and it's thermal characteristics

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Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...

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Bibliographic Details
Main Authors: Shuyu, Bao, Lee, Kwang Hong, Chong, Gang Yih, Fitzgerald, Eugene A., Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Science::Physics::Atomic physics::Solid state physics
Online Access:https://hdl.handle.net/10356/103772
http://hdl.handle.net/10220/25898

Internet

https://hdl.handle.net/10356/103772
http://hdl.handle.net/10220/25898

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