AlN-AlN layer bonding and it's thermal characteristics
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...
Hlavní autoři: | , , , , |
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Další autoři: | |
Médium: | Journal Article |
Jazyk: | English |
Vydáno: |
2015
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Témata: | |
On-line přístup: | https://hdl.handle.net/10356/103772 http://hdl.handle.net/10220/25898 |