AlN-AlN layer bonding and it's thermal characteristics

AlN-AlN layer bonding and it's thermal characteristics

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Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...

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Hlavní autoři: Shuyu, Bao, Lee, Kwang Hong, Chong, Gang Yih, Fitzgerald, Eugene A., Tan, Chuan Seng
Další autoři: School of Electrical and Electronic Engineering
Médium: Journal Article
Jazyk:English
Vydáno: 2015
Témata:
DRNTU::Science::Physics::Atomic physics::Solid state physics
On-line přístup:https://hdl.handle.net/10356/103772
http://hdl.handle.net/10220/25898

Internet

https://hdl.handle.net/10356/103772
http://hdl.handle.net/10220/25898

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