Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device
The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of...
| Päätekijät: | , , , , , |
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| Muut tekijät: | |
| Aineistotyyppi: | Journal Article |
| Kieli: | English |
| Julkaistu: |
2014
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| Aiheet: | |
| Linkit: | https://hdl.handle.net/10356/103797 http://hdl.handle.net/10220/24557 |