Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device
The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/103797 http://hdl.handle.net/10220/24557 |
| _version_ | 1826126632863137792 |
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| author | Ang, Diing Shenp Zhang, H. Z. Gu, C. J. Yew, K. S. Wang, X. P. Lo, G. Q. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ang, Diing Shenp Zhang, H. Z. Gu, C. J. Yew, K. S. Wang, X. P. Lo, G. Q. |
| author_sort | Ang, Diing Shenp |
| collection | NTU |
| description | The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device. |
| first_indexed | 2024-10-01T06:55:50Z |
| format | Journal Article |
| id | ntu-10356/103797 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:55:50Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1037972020-03-07T14:02:41Z Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device Ang, Diing Shenp Zhang, H. Z. Gu, C. J. Yew, K. S. Wang, X. P. Lo, G. Q. School of Electrical and Electronic Engineering DRNTU::Science::Physics The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2014-12-26T08:35:30Z 2019-12-06T21:20:28Z 2014-12-26T08:35:30Z 2019-12-06T21:20:28Z 2014 2014 Journal Article Zhang, H. Z., Ang, D. S., Gu, C. J., Yew, K. S., Wang, X. P., & Lo, G. Q. (2014). Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device. Applied physics letters, 105(22), 222106-. https://hdl.handle.net/10356/103797 http://hdl.handle.net/10220/24557 10.1063/1.4903341 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4903341]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics Ang, Diing Shenp Zhang, H. Z. Gu, C. J. Yew, K. S. Wang, X. P. Lo, G. Q. Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| title | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| title_full | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| title_fullStr | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| title_full_unstemmed | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| title_short | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| title_sort | role of interfacial layer on complementary resistive switching in the tin hfox tin resistive memory device |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/103797 http://hdl.handle.net/10220/24557 |
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