Al content-dependent resistive switching in Al-rich AlOxNy thin films
Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and...
| Main Authors: | , , , |
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| 其他作者: | |
| 格式: | Journal Article |
| 语言: | English |
| 出版: |
2015
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| 主题: | |
| 在线阅读: | https://hdl.handle.net/10356/103949 http://hdl.handle.net/10220/24647 |