Influence of the excess Al content on memory behaviors of Worm devices based on sputtered Al-rich aluminum oxide thin films

Influence of the excess Al content on memory behaviors of Worm devices based on sputtered Al-rich aluminum oxide thin films

Reactive sputtering has been used to synthesize Al-rich Al2O3 thin films. After post-deposition thermal annealing, the excess Al content forms Al nanocrystals (nc-Al) which are dispersed in the Al2O3 matrix. In the Al/Al-rich Al2O3/p-Si structure, the current conduction which follows a Schottky emis...

Full description

Bibliographic Details
Main Authors: Liu, Z., Liu, P., Li, H. K., Chen, T. P.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/104149
http://hdl.handle.net/10220/24656

Internet

https://hdl.handle.net/10356/104149
http://hdl.handle.net/10220/24656

Similar Items