Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study

Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study

Grain boundaries in the polycrystalline microstructure of post-annealed high-κ (HK) dielectrics are a major limitation in the reliability of HK dielectrics used for advanced CMOS technologies. Another challenge in the field of HK dielectrics is to ensure higher drain drive current in CMOS, while mai...

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Bibliographic Details
Main Authors: Shubhakar, Kalya, Pey, Kin Leong, Kouda, Miyuki, Kakushima, Kuniyuki, Iwai, Hiroshi, Bosman, Michel, Kushvaha, Sunil Singh, O'Shea, Sean Joseph
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/104193
http://hdl.handle.net/10220/19769

Internet

https://hdl.handle.net/10356/104193
http://hdl.handle.net/10220/19769

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