Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2
Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/104380 http://hdl.handle.net/10220/24643 |