Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2
Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2015
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| Online Access: | https://hdl.handle.net/10356/104380 http://hdl.handle.net/10220/24643 |
| _version_ | 1826128969060057088 |
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| author | Banerjee, Karan Son, Jaesung Deorani, Praveen Ren, Peng Wang, Lan Yang, Hyunsoo |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Banerjee, Karan Son, Jaesung Deorani, Praveen Ren, Peng Wang, Lan Yang, Hyunsoo |
| author_sort | Banerjee, Karan |
| collection | NTU |
| description | Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative MR contribution with increasing temperature and a robustness of the topological surface states to external disorder. |
| first_indexed | 2024-10-01T07:33:11Z |
| format | Journal Article |
| id | ntu-10356/104380 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:33:11Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1043802023-02-28T19:45:18Z Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 Banerjee, Karan Son, Jaesung Deorani, Praveen Ren, Peng Wang, Lan Yang, Hyunsoo School of Physical and Mathematical Sciences DRNTU::Science::Physics Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative MR contribution with increasing temperature and a robustness of the topological surface states to external disorder. Published version 2015-01-16T01:36:56Z 2019-12-06T21:31:38Z 2015-01-16T01:36:56Z 2019-12-06T21:31:38Z 2014 2014 Journal Article Banerjee, K., Son, J., Deorani, P., Ren, P., Wang, L., & Yang, H. (2014). Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2. Physical review B, 90(23), 235427-. 1098-0121 https://hdl.handle.net/10356/104380 http://hdl.handle.net/10220/24643 10.1103/PhysRevB.90.235427 en Physical review B © 2014 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1103/PhysRevB.90.235427]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics Banerjee, Karan Son, Jaesung Deorani, Praveen Ren, Peng Wang, Lan Yang, Hyunsoo Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 |
| title | Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 |
| title_full | Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 |
| title_fullStr | Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 |
| title_full_unstemmed | Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 |
| title_short | Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2 |
| title_sort | defect induced negative magnetoresistance and surface state robustness in the topological insulator bisbtese2 |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/104380 http://hdl.handle.net/10220/24643 |
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