Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs

Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs

We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxy...

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Bibliografski detalji
Glavni autori: Liu, Wenhu, Padovani, Andrea, Larcher, Luca, Raghavan, Nagarajan, Pey, Kin Leong
Daljnji autori: School of Electrical and Electronic Engineering
Format: Journal Article
Jezik:English
Izdano: 2014
Teme:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online pristup:https://hdl.handle.net/10356/104587
http://hdl.handle.net/10220/20244

Internet

https://hdl.handle.net/10356/104587
http://hdl.handle.net/10220/20244

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