Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxy...
Glavni autori: | , , , , |
---|---|
Daljnji autori: | |
Format: | Journal Article |
Jezik: | English |
Izdano: |
2014
|
Teme: | |
Online pristup: | https://hdl.handle.net/10356/104587 http://hdl.handle.net/10220/20244 |