Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed...

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Bibliographic Details
Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Molecular beam epitaxy
Antimonides
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/104687
http://hdl.handle.net/10220/50025

Internet

https://hdl.handle.net/10356/104687
http://hdl.handle.net/10220/50025

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