Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/104687 http://hdl.handle.net/10220/50025 |
| _version_ | 1811684182978461696 |
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| author | Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
| author_sort | Jia, Bo Wen |
| collection | NTU |
| description | A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 µm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody. |
| first_indexed | 2024-10-01T04:24:34Z |
| format | Journal Article |
| id | ntu-10356/104687 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:24:34Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/1046872020-03-07T14:02:44Z Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt School of Electrical and Electronic Engineering Molecular beam epitaxy Antimonides DRNTU::Engineering::Electrical and electronic engineering A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 µm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody. NRF (Natl Research Foundation, S’pore) Accepted version 2019-09-26T07:58:37Z 2019-12-06T21:37:34Z 2019-09-26T07:58:37Z 2019-12-06T21:37:34Z 2018 Journal Article Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer. Journal of Crystal Growth, 490, 97-103. doi:10.1016/j.jcrysgro.2018.03.026 0022-0248 https://hdl.handle.net/10356/104687 http://hdl.handle.net/10220/50025 10.1016/j.jcrysgro.2018.03.026 en Journal of Crystal Growth © 2018 Elsevier B.V. All rights reserved. This paper was published in Journal of Crystal Growth and is made available with permission of Elsevier B.V. 18 p. application/pdf |
| spellingShingle | Molecular beam epitaxy Antimonides DRNTU::Engineering::Electrical and electronic engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer |
| title | Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer |
| title_full | Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer |
| title_fullStr | Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer |
| title_full_unstemmed | Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer |
| title_short | Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer |
| title_sort | growth and characterization of an insb infrared photoconductor on si via an alsb gasb buffer |
| topic | Molecular beam epitaxy Antimonides DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/104687 http://hdl.handle.net/10220/50025 |
| work_keys_str_mv | AT jiabowen growthandcharacterizationofaninsbinfraredphotoconductoronsiviaanalsbgasbbuffer AT tankianhua growthandcharacterizationofaninsbinfraredphotoconductoronsiviaanalsbgasbbuffer AT lokewankhai growthandcharacterizationofaninsbinfraredphotoconductoronsiviaanalsbgasbbuffer AT wicaksonosatrio growthandcharacterizationofaninsbinfraredphotoconductoronsiviaanalsbgasbbuffer AT yoonsoonfatt growthandcharacterizationofaninsbinfraredphotoconductoronsiviaanalsbgasbbuffer |