A ZnTaOx based resistive switching random access memory

A ZnTaOx based resistive switching random access memory

The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such...

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Bibliographic Details
Main Authors: Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., Sun, X. W.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/104882
http://hdl.handle.net/10220/20266
http://dx.doi.org/10.1149/2.0101407ssl

Internet

https://hdl.handle.net/10356/104882
http://hdl.handle.net/10220/20266
http://dx.doi.org/10.1149/2.0101407ssl

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