The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers
In this work, we investigated the optical characteristics of 1.3 µm p -doped InAs/InGaAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. With reference to the as-grown QD lasers, it is found that 1) the integrated intensity of the photoluminescence could be increased by...
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/104901 http://hdl.handle.net/10220/16819 http://dx.doi.org/10.1002/pssc.201100266 |