Band alignment between GaN and ZrO2 formed by atomic layer deposition

Band alignment between GaN and ZrO2 formed by atomic layer deposition

The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based...

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Bibliographic Details
Main Authors: Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/105073
http://hdl.handle.net/10220/20376
http://dx.doi.org/10.1063/1.4890470

Internet

https://hdl.handle.net/10356/105073
http://hdl.handle.net/10220/20376
http://dx.doi.org/10.1063/1.4890470

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