Band alignment between GaN and ZrO2 formed by atomic layer deposition
The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based...
| 主要な著者: | , , , , , , |
|---|---|
| その他の著者: | |
| フォーマット: | Journal Article |
| 言語: | English |
| 出版事項: |
2014
|
| 主題: | |
| オンライン･アクセス: | https://hdl.handle.net/10356/105073 http://hdl.handle.net/10220/20376 http://dx.doi.org/10.1063/1.4890470 |
| 要約: | The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE V of 1 ± 0.2 eV and conduction band discontinuity ΔE C of 1.2 ± 0.2 eV at ZrO2/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO2 layer into account. |
|---|