Band alignment between GaN and ZrO2 formed by atomic layer deposition
The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/105073 http://hdl.handle.net/10220/20376 http://dx.doi.org/10.1063/1.4890470 |
| _version_ | 1811683982693105664 |
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| author | Ye, Gang Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ye, Gang Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong |
| author_sort | Ye, Gang |
| collection | NTU |
| description | The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE V of 1 ± 0.2 eV and conduction band discontinuity ΔE C of 1.2 ± 0.2 eV at ZrO2/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO2 layer into account. |
| first_indexed | 2024-10-01T04:21:23Z |
| format | Journal Article |
| id | ntu-10356/105073 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:21:23Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1050732019-12-06T21:45:40Z Band alignment between GaN and ZrO2 formed by atomic layer deposition Ye, Gang Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE V of 1 ± 0.2 eV and conduction band discontinuity ΔE C of 1.2 ± 0.2 eV at ZrO2/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO2 layer into account. Published version 2014-08-21T07:09:53Z 2019-12-06T21:45:40Z 2014-08-21T07:09:53Z 2019-12-06T21:45:40Z 2014 2014 Journal Article Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Li, Y., Liu, Z. H., et al. (2014). Band alignment between GaN and ZrO2 formed by atomic layer deposition. Applied Physics Letters, 105(2), 022106-. 0003-6951 https://hdl.handle.net/10356/105073 http://hdl.handle.net/10220/20376 http://dx.doi.org/10.1063/1.4890470 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4890470]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ye, Gang Wang, Hong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| title | Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| title_full | Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| title_fullStr | Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| title_full_unstemmed | Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| title_short | Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| title_sort | band alignment between gan and zro2 formed by atomic layer deposition |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/105073 http://hdl.handle.net/10220/20376 http://dx.doi.org/10.1063/1.4890470 |
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