Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode

Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode

Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage c...

Full description

Bibliographic Details
Main Authors: Iwan, S., Bambang, S., Zhao, J. L., Sun, L., Zhang, S., Ryu, H. H., Tan, Swee Tiam, Fan, Hai Ming, Sun, Xiaowei
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/105298
http://hdl.handle.net/10220/17751
http://dx.doi.org/10.1016/j.physb.2012.03.072

Internet

https://hdl.handle.net/10356/105298
http://hdl.handle.net/10220/17751
http://dx.doi.org/10.1016/j.physb.2012.03.072

Similar Items