Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode
Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage c...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105298 http://hdl.handle.net/10220/17751 http://dx.doi.org/10.1016/j.physb.2012.03.072 |
| _version_ | 1811682086460850176 |
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| author | Iwan, S. Bambang, S. Zhao, J. L. Sun, L. Zhang, S. Ryu, H. H. Tan, Swee Tiam Fan, Hai Ming Sun, Xiaowei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Iwan, S. Bambang, S. Zhao, J. L. Sun, L. Zhang, S. Ryu, H. H. Tan, Swee Tiam Fan, Hai Ming Sun, Xiaowei |
| author_sort | Iwan, S. |
| collection | NTU |
| description | Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films. |
| first_indexed | 2024-10-01T03:51:15Z |
| format | Journal Article |
| id | ntu-10356/105298 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:51:15Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1052982019-12-06T21:48:53Z Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode Iwan, S. Bambang, S. Zhao, J. L. Sun, L. Zhang, S. Ryu, H. H. Tan, Swee Tiam Fan, Hai Ming Sun, Xiaowei School of Electrical and Electronic Engineering School of Mechanical and Aerospace Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films. 2013-11-15T08:07:33Z 2019-12-06T21:48:53Z 2013-11-15T08:07:33Z 2019-12-06T21:48:53Z 2012 2012 Journal Article Iwan, S., Bambang, S., Zhao, J. L., Tan, S. T., Fan, H. M., Sun, L., et al. (2012). Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode. Physica B : condensed matter, 407(14), 2721-2724. 0921-4526 https://hdl.handle.net/10356/105298 http://hdl.handle.net/10220/17751 http://dx.doi.org/10.1016/j.physb.2012.03.072 en Physica B : condensed matter |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Iwan, S. Bambang, S. Zhao, J. L. Sun, L. Zhang, S. Ryu, H. H. Tan, Swee Tiam Fan, Hai Ming Sun, Xiaowei Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode |
| title | Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode |
| title_full | Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode |
| title_fullStr | Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode |
| title_full_unstemmed | Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode |
| title_short | Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode |
| title_sort | green electroluminescence from an n zno er p si heterostructured light emitting diode |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/105298 http://hdl.handle.net/10220/17751 http://dx.doi.org/10.1016/j.physb.2012.03.072 |
| work_keys_str_mv | AT iwans greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT bambangs greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT zhaojl greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT sunl greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT zhangs greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT ryuhh greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT tansweetiam greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT fanhaiming greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode AT sunxiaowei greenelectroluminescencefromannznoerpsiheterostructuredlightemittingdiode |