Low temperature grown GaNAsSb : a promising material for photoconductive switch application

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the...

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Bibliographic Details
Main Authors:	Li, D. S., Saadsaoud, N., Tripon-Canseliet, C., Lampin, J. F., Decoster, D., Chazelas, J., Yoon, Soon Fatt, Wicaksono, Satrio, Loke, Wan Khai, Tan, Kian Hua
Other Authors:	School of Electrical and Electronic Engineering
Format:	Journal Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/105345 http://hdl.handle.net/10220/16573

Internet

https://hdl.handle.net/10356/105345
http://hdl.handle.net/10220/16573

Low temperature grown GaNAsSb : a promising material for photoconductive switch application

Internet

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