Thermal reversible breakdown and resistivity switching in hafnium dioxide

Thermal reversible breakdown and resistivity switching in hafnium dioxide

We present a model of thermal reversible breakdown via conductive filaments (CFs) in hafnium dioxide (HfO2). These CFs appear as a result of electrical pretreatment of a metal/HfO 2/metal (semiconductor) nanostructure (MIM(S)). The model is based on an assumption that the thermal reversible breakdow...

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Bibliographic Details
Main Authors: Migas, D. B., Danilyuk, A. L., Borisenko, Victor E., Wu, X., Raghavan, N., Danilyuk, M. A., Pey, K. L.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:https://hdl.handle.net/10356/106280
http://hdl.handle.net/10220/23997
http://jnep.sumdu.edu.ua/en/component/content/full_article/350

Internet

https://hdl.handle.net/10356/106280
http://hdl.handle.net/10220/23997
http://jnep.sumdu.edu.ua/en/component/content/full_article/350

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