Thermal reversible breakdown and resistivity switching in hafnium dioxide
We present a model of thermal reversible breakdown via conductive filaments (CFs) in hafnium dioxide (HfO2). These CFs appear as a result of electrical pretreatment of a metal/HfO 2/metal (semiconductor) nanostructure (MIM(S)). The model is based on an assumption that the thermal reversible breakdow...
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| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/106280 http://hdl.handle.net/10220/23997 http://jnep.sumdu.edu.ua/en/component/content/full_article/350 |
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| author | Migas, D. B. Danilyuk, A. L. Borisenko, Victor E. Wu, X. Raghavan, N. Danilyuk, M. A. Pey, K. L. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Migas, D. B. Danilyuk, A. L. Borisenko, Victor E. Wu, X. Raghavan, N. Danilyuk, M. A. Pey, K. L. |
| author_sort | Migas, D. B. |
| collection | NTU |
| description | We present a model of thermal reversible breakdown via conductive filaments (CFs) in hafnium dioxide (HfO2). These CFs appear as a result of electrical pretreatment of a metal/HfO 2/metal (semiconductor) nanostructure (MIM(S)). The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on temperature. The corresponding current-voltage characteristic and temperature of a CF in its middle and at the interface with an electrode are calculated taking into account the heat conduction equation and boundary conditions with heat dissipation via electrodes. It is found that the current-voltage characteristic of a CF has three specific regions. The initial and final regions have turned out to be linear with respect to the current and display different slopes, while the middle region is characterized by both the S-shaped and ultralinear dependences which are affected by the ambient temperature and nanostructure parameters. The switching potential from the high resistivity state (HRS) to the low resistivity state (LRS) was shown to decrease with the ambient temperature and with worsening of heat dissipation conditions. |
| first_indexed | 2024-10-01T07:37:44Z |
| format | Journal Article |
| id | ntu-10356/106280 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:37:44Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1062802019-12-06T22:07:57Z Thermal reversible breakdown and resistivity switching in hafnium dioxide Migas, D. B. Danilyuk, A. L. Borisenko, Victor E. Wu, X. Raghavan, N. Danilyuk, M. A. Pey, K. L. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics We present a model of thermal reversible breakdown via conductive filaments (CFs) in hafnium dioxide (HfO2). These CFs appear as a result of electrical pretreatment of a metal/HfO 2/metal (semiconductor) nanostructure (MIM(S)). The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on temperature. The corresponding current-voltage characteristic and temperature of a CF in its middle and at the interface with an electrode are calculated taking into account the heat conduction equation and boundary conditions with heat dissipation via electrodes. It is found that the current-voltage characteristic of a CF has three specific regions. The initial and final regions have turned out to be linear with respect to the current and display different slopes, while the middle region is characterized by both the S-shaped and ultralinear dependences which are affected by the ambient temperature and nanostructure parameters. The switching potential from the high resistivity state (HRS) to the low resistivity state (LRS) was shown to decrease with the ambient temperature and with worsening of heat dissipation conditions. Published version 2014-10-10T08:41:37Z 2019-12-06T22:07:57Z 2014-10-10T08:41:37Z 2019-12-06T22:07:57Z 2012 2012 Journal Article Danilyuk, M. A., Migas, D. B., Danilyuk, A. L., Borisenko, V. E., Wu, X., Raghavan, N., et al. (2012). Thermal reversible breakdown and resistivity switching in hafnium dioxide. Journal of nano- and electronic physics, 4(1), 01014-. https://hdl.handle.net/10356/106280 http://hdl.handle.net/10220/23997 http://jnep.sumdu.edu.ua/en/component/content/full_article/350 en Journal of nano- and electronic physics © 2012 Sumy State University. This paper was published in Journal of Nano- and Electronic Physics and is made available as an electronic reprint (preprint) with permission of Sumy State University. The paper can be found at the following official URL: [http://jnep.sumdu.edu.ua/en/component/content/full_article/350]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Migas, D. B. Danilyuk, A. L. Borisenko, Victor E. Wu, X. Raghavan, N. Danilyuk, M. A. Pey, K. L. Thermal reversible breakdown and resistivity switching in hafnium dioxide |
| title | Thermal reversible breakdown and resistivity switching in hafnium dioxide |
| title_full | Thermal reversible breakdown and resistivity switching in hafnium dioxide |
| title_fullStr | Thermal reversible breakdown and resistivity switching in hafnium dioxide |
| title_full_unstemmed | Thermal reversible breakdown and resistivity switching in hafnium dioxide |
| title_short | Thermal reversible breakdown and resistivity switching in hafnium dioxide |
| title_sort | thermal reversible breakdown and resistivity switching in hafnium dioxide |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/106280 http://hdl.handle.net/10220/23997 http://jnep.sumdu.edu.ua/en/component/content/full_article/350 |
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