Design of ring oscillator structures for measuring isolated NBTI and PBTI
Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/106580 http://hdl.handle.net/10220/17772 http://dx.doi.org/10.1109/ISCAS.2012.6271555 |