The dynamics of nickelidation for self-aligned contacts to InGaAs channels
The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed investigation of metal-semiconductor contacts at the nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report comprehensive studies on the...
| Autors principals: | , , , , , , |
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| Altres autors: | |
| Format: | Journal Article |
| Idioma: | English |
| Publicat: |
2019
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| Matèries: | |
| Accés en línia: | https://hdl.handle.net/10356/106868 http://hdl.handle.net/10220/48992 |