Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when...

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Bibliographic Details
Main Authors: Sun, Juan, Nalla, Venkatram, Nguyen, Mai, Ren, Yi, Chiam, Sing Yang, Wang, Yue, Tai, Kong Fai, Sun, Handong, Zheludev, Nikolay, Batabyal, Sudip K., Wong, Lydia H.
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Materials::Energy materials
Online Access:https://hdl.handle.net/10356/107202
http://hdl.handle.net/10220/25312

Internet

https://hdl.handle.net/10356/107202
http://hdl.handle.net/10220/25312

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