Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Sun, Juan, Nalla, Venkatram, Nguyen, Mai, Ren, Yi, Chiam, Sing Yang, Wang, Yue, Tai, Kong Fai, Sun, Handong, Zheludev, Nikolay, Batabyal, Sudip K., Wong, Lydia H.
Awduron Eraill:	School of Materials Science and Engineering
Fformat:	Journal Article
Iaith:	English
Cyhoeddwyd:	2015
Pynciau:	DRNTU::Engineering::Materials::Energy materials
Mynediad Ar-lein:	https://hdl.handle.net/10356/107202 http://hdl.handle.net/10220/25312

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