Analytical and experimental characterization of sub-half micron MOS devices

We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Conseq...

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Bibliographic Details
Main Author: Chew, Johnny Kok Wai.
Other Authors: Rofail, Samir
Format: Thesis
Language:English
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/13187