Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
Sequential tunnelling in tight-binding superlattices has been studied experimentally and theoretically. The observed negative differential conductance (NDC) effect is attributed to the formation of high-field domains (HFDs) during the electron sequential tunnelling process through the superlattice....
| Үндсэн зохиолч: | |
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| Бусад зохиолчид: | |
| Формат: | Дипломын ажил |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2008
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| Нөхцлүүд: | |
| Онлайн хандалт: | http://hdl.handle.net/10356/13200 |