Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
Sequential tunnelling in tight-binding superlattices has been studied experimentally and theoretically. The observed negative differential conductance (NDC) effect is attributed to the formation of high-field domains (HFDs) during the electron sequential tunnelling process through the superlattice....
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| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/13200 |