Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy

Sequential tunnelling in tight-binding superlattices has been studied experimentally and theoretically. The observed negative differential conductance (NDC) effect is attributed to the formation of high-field domains (HFDs) during the electron sequential tunnelling process through the superlattice....

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолч: Han, Zhiyong.
Бусад зохиолчид: Yoon, Soon Fatt
Формат: Дипломын ажил
Хэл сонгох:English
Хэвлэсэн: 2008
Нөхцлүүд:
Онлайн хандалт:http://hdl.handle.net/10356/13200