Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
This thesis presents the molecular beam epitaxial (MBE) growth of In0.48Ga0.52P epilayers on GaAs substrate (001) using the valved phosphorus cracker cell at various growth conditions. Results from crystalline quality, optical, transport and surface morphology characterizations of the material syste...
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| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/13321 |