Novel processes for an Al2O3/AlN composite system as dielectric substrate for microelectronics application
Recent development of higher power and higher speed in integrated circuits has led to a corresponding demand in improvement for dielectric substrate materials. Conventional Al2O3 system has probably reached its maximum possible performance, with AlN being a prospective alternative, due to its signif...
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Format: | Thesis |
Language: | English |
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2008
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Online Access: | http://hdl.handle.net/10356/13469 |