Direct simulation Monte Carlo method of deposition processes

Direct simulation Monte Carlo method of deposition processes

Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक: Tan, Chee Hong.
अन्य लेखक: Zhao, Yong
स्वरूप: थीसिस
भाषा:English
प्रकाशित: 2008
विषय:
DRNTU::Engineering::Computer science and engineering::Computing methodologies::Simulation and modeling
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
ऑनलाइन पहुंच:http://hdl.handle.net/10356/13523

इंटरनेट

http://hdl.handle.net/10356/13523

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